Topics
Contents Editorial, 22 Article(s)
Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices
Xiaoxing Ke, and Yong Zhang

Abstract

Journal of Semiconductors
Apr. 01, 2022, Vol. 43 Issue 4 040101 (2022)
Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits
Wei Wang, Lingjuan Zhao, Dan Lu, Jianping Yao, Weiping Huang, Yong Liu, and Brent Little

Abstract

Journal of Semiconductors
Apr. 01, 2021, Vol. 42 Issue 4 040101 (2021)
Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration
Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, and Ming Li

Abstract

Journal of Semiconductors
Feb. 01, 2021, Vol. 42 Issue 2 020101 (2021)
Preface to the Special Issue on Flexible Energy Devices
Zhiyong Fan, Yonghua Chen, Yuanjing Lin, Yunlong Zi, Hyunhyub Ko, and Qianpeng Zhang

Abstract

Journal of Semiconductors
Oct. 01, 2021, Vol. 42 Issue 10 100101 (2021)
Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing
Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, and Ming Li

Abstract

Journal of Semiconductors
Jan. 01, 2021, Vol. 42 Issue 1 010101 (2021)
Preface to the Special Issue on Challenges and Possibilities of Energy Storage
Chao Zhao, Zhijie Wang, Dajun Shu, and Yong Lei

Journal of Semiconductors
Sep. 01, 2020, Vol. 41 Issue 9 090101 (2020)
Preface to the Special Issue on Monoelemental 2D Semiconducting Materials and Their Applications
Han Zhang, Xiantao Jiang, Yeliang Wang, Krassimir Panajotov, and Shengli Zhang

Journal of Semiconductors
Aug. 01, 2020, Vol. 41 Issue 8 080101 (2020)
Preface to the Special Issue on Quantum Transport in Mesoscopic Systems
Yu Ye, and Zheng Han

Journal of Semiconductors
Jul. 01, 2020, Vol. 41 Issue 7 070101 (2020)
Preface to the Special Issue on Perovskite Semiconductor Optoelectronic Materials and Devices
Jingbi You, Jiang Tang, Haibo Zeng, and Jianpu Wang

Journal of Semiconductors
May. 01, 2020, Vol. 41 Issue 5 050101 (2020)
Preface to the Special Issue on Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications
Yongfeng Mei, Wei Gao, Hui Fang, Yuan Lin, and Guozhen Shen

Journal of Semiconductors
Apr. 01, 2020, Vol. 41 Issue 4 040101 (2020)
Preface to the Special Issue on Reconfigurable Computing for Energy Efficient AI Microchip Technologies
Haigang Yang, Yajun Ha, Lingli Wang, Wei Zhang, and Yingyan Lin

Journal of Semiconductors
Feb. 01, 2020, Vol. 41 Issue 2 020101 (2020)
Preface to the Special Issue on Advanced Analog and Mixed-Mode Integrated Circuits
Baoyong Chi, Nan Sun, Liyuan Liu, and Yan Lu

Journal of Semiconductors
Nov. 01, 2020, Vol. 41 Issue 11 110101 (2020)
Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang
Zhijie Wang, Chao Zhao, and Fei Ding

Journal of Semiconductors
Jan. 01, 2020, Vol. 41 Issue 1 010101 (2020)
On the applicability of adiabatic approximation in multiphonon recombination theory
Kun Huang

A recent paper by C. H. Henry and D. V. Lang claims that the adiabatic approximation breaks down in the neighborhood of the intersection of the adiabatic potential curves for the two electronic states, between which multiphonon transitions occur. It is shown that their claim is not justified; what they consider to be the sign of failure of the adiabatic approximation is no more than an indication of the fact that owing to the uncertainty principle, there is a finite neighborhood around the above mentioned point of intersection, throughout which multi-phonon transitions can occur. Direct calculation of the multi-phonon transition probability on the basis of the adiabatic approximation gives in fact a result identical with the result obtained with their version of the theory. Further discussions contend that in more general situations Henry and Lang’s formulation of the theory will no longer be applicable and a proper adiabatic approximation treatment by first lifting the degeneracy at the intersection point will be necessary.

Journal of Semiconductors
Sep. 01, 2019, Vol. 40 Issue 9 090102 (2019)
Preface to the Special Issue on Challenges and Possibilities of Magnetic Semiconductors
Xinyu Liu, Dahai Wei, and Jianhua Zhao

Journal of Semiconductors
Aug. 01, 2019, Vol. 40 Issue 8 080101 (2019)
Preface to the Special Issue on Quantum Light Source from Semiconductors
Xiulai Xu, and Jinshi Xu

Journal of Semiconductors
Jul. 01, 2019, Vol. 40 Issue 7 070101 (2019)
Preface to the Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices
Ping-Heng Tan, Lijun Zhang, Lun Dai, and Shuyun Zhou

Journal of Semiconductors
Jun. 01, 2019, Vol. 40 Issue 6 060101 (2019)
Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices
Jinmin Li, Xinqiang Wang, Dabing Li, and Tongbo Wei

Journal of Semiconductors
Dec. 01, 2019, Vol. 40 Issue 12 120101 (2019)
Preface to the Special Issue on Flexible and Wearable Sensors for Robotics and Health
Zhiyong Fan, Johnny C Ho, Chuan Wang, Yun-Ze Long, and Huan Liu

Journal of Semiconductors
Nov. 01, 2019, Vol. 40 Issue 11 110101 (2019)
Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si
Huiyun Liu, Yikai Su, Chuanbo Li, and Xuhan Guo

Journal of Semiconductors
Oct. 01, 2019, Vol. 40 Issue 10 100101 (2019)
Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices
Xutang Tao, Jiandong Ye, Shibing Long, and Zhitai Jia

Journal of Semiconductors
Jan. 01, 2019, Vol. 40 Issue 1 010101 (2019)
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